TEST2

TEST2600 vs TEST2 vs TEST20100704-1209PM

 
PartNumberTEST2600TEST2TEST20100704-1209PM
DescriptionPhototransistors 70V 100mW 920nm
ManufacturerVishayVishay Semiconductor Opto Division-
Product CategoryPhototransistorsOptical Sensors - Photodiodes-
RoHSY--
ProductPhototransistorsPhototransistors-
Package / CaseSide View Micro--
Mounting StyleThrough HoleThrough Hole-
Peak Wavelength920 nm--
Maximum On State Collector Current50 mA50 mA-
Collector Emitter Voltage VCEO Max70 V--
Collector Emitter Breakdown Voltage70 V70 V-
Collector Emitter Saturation Voltage0.3 V0.3 V-
Dark Current100 nA100 nA-
Pd Power Dissipation100 mW--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 85 C+ 85 C-
Height3.1 mm--
Length3.6 mm--
Lens Color/StyleBlack--
PackagingBulkBulk-
TypeIR ChipIR Chip-
Wavelength920 nm950nm-
Width2.2 mm--
BrandVishay Semiconductors--
Half Intensity Angle Degrees30 deg--
Light Current2.5 mA2.5 mA-
Product TypePhototransistors--
Factory Pack Quantity5000--
SubcategoryOptical Detectors and Sensors--
Series-*-
Package Case-Side View Micro-
Operating Temperature--40°C ~ 85°C (TA)-
Mounting Type-Through Hole-
Power Max-100mW-
Current Collector Ic Max-50mA-
Voltage Collector Emitter Breakdown Max-70V-
Orientation-Universal-
Current Dark Id Max-100nA-
Viewing Angle-120°-
Pd Power Dissipation-100 mW-
Collector Emitter Voltage VCEO Max-70 V-
Fabricante Parte # Descripción RFQ
Vishay Semiconductors
Vishay Semiconductors
TEST2600 Phototransistors 70V 100mW 920nm
TEST2600 Optical Sensors Phototransistors 70V 100mW 920nm
TEST2 Nuevo y original
TEST2602 Nuevo y original
TEST2H2S04 Nuevo y original
TEST20100704-1209PM Nuevo y original
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