 |  |  | |
| PartNumber | TC58NVG3S0FTA00 | TC58NVG3S0FBAID | TC58NVG3S0ETA00 |
| Description | NAND Flash 3.3V 8Gb 32nm SLC NAND (EEPROM) | NAND Flash 8Gb 32nm SLC NAND (EEPROM) | |
| Manufacturer | Toshiba | Toshiba | TOSHIBA |
| Product Category | NAND Flash | NAND Flash | Memory |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-48 | TFBGA-63 | - |
| Memory Size | 8 Gbit | 8 Gbit | - |
| Interface Type | Parallel | Parallel | - |
| Organization | 1 G x 8 | 1 G x 8 | - |
| Timing Type | Synchronous | Synchronous | - |
| Data Bus Width | 8 bit | 8 bit | - |
| Supply Voltage Min | 2.7 V | 2.7 V | - |
| Supply Voltage Max | 3.6 V | 3.6 V | - |
| Supply Current Max | 30 mA | 30 mA | - |
| Minimum Operating Temperature | 0 C | - 40 C | - |
| Maximum Operating Temperature | + 70 C | + 85 C | - |
| Packaging | Tray | Tray | - |
| Memory Type | NAND | NAND | - |
| Product | NAND Flash | NAND Flash | - |
| Speed | 25 ns | 25 ns | - |
| Architecture | Block Erase | Block Erase | - |
| Brand | Toshiba Memory | Toshiba Memory | - |
| Maximum Clock Frequency | - | - | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | NAND Flash | NAND Flash | - |
| Factory Pack Quantity | 96 | 168 | - |
| Subcategory | Memory & Data Storage | Memory & Data Storage | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba Memory |
TC58NVG3S0FTA00 | NAND Flash 3.3V 8Gb 32nm SLC NAND (EEPROM) | |
| TC58NVG3S0FTAI0 | NAND Flash 3.3V 8Gb 32nm I-Temp SLC NAND (EEPROM) | ||
| TC58NVG3S0FBAID | NAND Flash 8Gb 32nm SLC NAND (EEPROM) | ||
| TC58NVG3S0ETA00 | Nuevo y original | ||
| TC58NVG3S0FTA00B4H | Nuevo y original | ||
| TC58NVG3S0FTA10 | Nuevo y original | ||
| TC58NVG3S0HTA00 | Nuevo y original | ||
| TC58NVG3S0FTA00 | Flash Memory 8Gb 3.3V SLC NAND Flash Memory EEPROM | ||
| TC58NVG3S0FTAI0 | Flash Memory 8Gb 3.3V SLC NAND Flash Memory EEPROM | ||
| TC58NVG3S0FBAID | Flash Memory 8Gb SLC NAND Flash Memory EEPROM | ||
| TC58NVG3S0FTA00-ND | Nuevo y original |