 |  | | |
| PartNumber | TC58BVG2S0HBAI4 | TC58BVG2S0HBAI4YCL | TC58BVG2S0HBAI4-ND |
| Description | NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) | EEPROM Serial 4G-bit 512M x 8 3.3V 63-Pin TFBGA (Alt: TC58BVG2S0HBAI4YCL) | |
| Manufacturer | Toshiba | - | - |
| Product Category | NAND Flash | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TFBGA-63 | - | - |
| Memory Size | 4 Gbit | - | - |
| Interface Type | Parallel | - | - |
| Organization | 512 M x 8 | - | - |
| Data Bus Width | 8 bit | - | - |
| Supply Voltage Min | 2.7 V | - | - |
| Supply Voltage Max | 3.6 V | - | - |
| Supply Current Max | 30 mA | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Packaging | Tray | - | - |
| Memory Type | NAND | - | - |
| Brand | Toshiba Memory | - | - |
| Maximum Clock Frequency | - | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | NAND Flash | - | - |
| Factory Pack Quantity | 210 | - | - |
| Subcategory | Memory & Data Storage | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba Memory |
TC58BVG2S0HBAI4 | NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) | |
| TC58BVG2S0HTA00 | NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) | ||
| TC58BVG2S0HTAI0 | NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) | ||
| TC58BVG2S0HTA00B4H | EEPROM Serial 4G-bit 512M x 8 3.3V 48-Pin TSOP-I (Alt: TC58BVG2S0HTA00B4H) | ||
| TC58BVG2S0HTA00 | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | ||
| TC58BVG2S0HBAI4 | IC FLASH 4G PARALLEL 63TFBGA Benand | ||
| TC58BVG2S0HTAI0 | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | ||
| TC58BVG2S0HBAI4YCL | EEPROM Serial 4G-bit 512M x 8 3.3V 63-Pin TFBGA (Alt: TC58BVG2S0HBAI4YCL) | ||
| TC58BVG2S0HBAI4-ND | Nuevo y original | ||
| TC58BVG2S0HTA00-ND | Nuevo y original | ||
| TC58BVG2S0HTAI0-ND | Nuevo y original |