 |  | | |
| PartNumber | SUP85N10-10-E3 | SUP85N10-10-GE3 | SUP85N10-10P-GE3 |
| Description | MOSFET 100V N-CH 175 DEG.C | MOSFET 100V 85A 250W 10.5mohm @ 10V | MOSFET RECOMMENDED ALT 781-SUP85N10-10-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 85 A | 85 A | - |
| Rds On Drain Source Resistance | 8.5 mOhms | 8.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 160 nC | 160 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 250 W | 250 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Tube | Tube | Tube |
| Series | SUP | SUP | SUP |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 25 S | 25 S | - |
| Fall Time | 130 ns | 130 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 90 ns | 90 ns | - |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 55 ns | 55 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Height | - | 15.49 mm | 15.49 mm |
| Length | - | 10.41 mm | 10.41 mm |
| Width | - | 4.7 mm | 4.7 mm |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SUP85N10-10-E3 | MOSFET 100V N-CH 175 DEG.C | |
| SUP85N10-10-GE3 | MOSFET 100V 85A 250W 10.5mohm @ 10V | ||
| SUP85N15-21-E3 | MOSFET 150V 85A 300W 21mohm @ 10V | ||
| SUP85N10-10P-GE3 | MOSFET RECOMMENDED ALT 781-SUP85N10-10-GE3 | ||
Vishay |
SUP85N10-10-GE3 | RF Bipolar Transistors MOSFET 100V 85A 250W 10.5mohm @ 10V | |
| SUP85N10-10-E3 | MOSFET N-CH 100V 85A TO220AB | ||
| SUP85N10-10P-GE3 | MOSFET N-CH 100V 85A TO220AB | ||
| SUP85N15-21-E3 | MOSFET N-CH 150V 85A TO220AB | ||
| SUP85N10 | Nuevo y original | ||
| SUP85N10 85N10 85A 100V | Nuevo y original | ||
| SUP85N10-10 | MOSFET RECOMMENDED ALT 781-SUP85N10-10-E3 | ||
| SUP85N10-10,SUP85N06 | Nuevo y original | ||
| SUP85N10-10E-3 | Nuevo y original | ||
| SUP85N10-10L-GE3 | Nuevo y original | ||
| SUP85N10-10P | Nuevo y original | ||
| SUP85N10-10_06 | Nuevo y original | ||
| SUP85N100 | Nuevo y original | ||
| SUP85N1010 | Nuevo y original | ||
| SUP85N1010GE3 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
| SUP85N15 | Nuevo y original | ||
| SUP85N15-21 | Nuevo y original |