 |  | |
| PartNumber | SUP50N03-5M1P-GE3 | SUP50N10-21P-GE3 |
| Description | MOSFET RECOMMENDED ALT 78-SUP85N03-3M6P-GE3 | MOSFET 100V N-Channel |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | E |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Tube | Tube |
| Height | 15.49 mm | - |
| Length | 10.41 mm | - |
| Series | SUP | SUP |
| Width | 4.7 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 100 V |
| Id Continuous Drain Current | - | 50 A |
| Rds On Drain Source Resistance | - | 17 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 68 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 125 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 N-Channel |
| Forward Transconductance Min | - | 40 S |
| Fall Time | - | 7 ns |
| Rise Time | - | 10 ns |
| Typical Turn Off Delay Time | - | 22 ns |
| Typical Turn On Delay Time | - | 10 ns |
| Part # Aliases | - | SUP40N10-30-GE3 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SUP50N03-5M1P-GE3 | MOSFET RECOMMENDED ALT 78-SUP85N03-3M6P-GE3 | |
| SUP50N10-21P-GE3 | MOSFET 100V N-Channel | ||
Vishay |
SUP50N03-5M1P-GE3 | Darlington Transistors MOSFET 30V 50A N-CH MOSFET | |
| SUP50N10-21P-GE3 | MOSFET N-CH 100V 50A TO220AB | ||
| SUP50N025-09 | Nuevo y original | ||
| SUP50N03-5M1-GE3 | Nuevo y original | ||
| SUP50N03-5M1P | Nuevo y original | ||
| SUP50N06 | Nuevo y original | ||
| SUP50N06-16L | Nuevo y original | ||
| SUP50N06-18 | Nuevo y original | ||
| SUP50N06-25 | Nuevo y original | ||
| SUP50N10-21P | Nuevo y original | ||
| SUP50N1021PGE3 | Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |