SUP40N

SUP40N25-60-E3 vs SUP40N10-30-E3 vs SUP40N10-30-GE3

 
PartNumberSUP40N25-60-E3SUP40N10-30-E3SUP40N10-30-GE3
DescriptionMOSFET 250V 40A 300W 60mohm @ 10VMOSFET RECOMMENDED ALT 78-SUP50N10-21P-GE3MOSFET N-CH 100V 38.5A TO220AB
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance49 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge140 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeTube-
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min70 S--
Fall Time145 ns--
Product TypeMOSFETMOSFET-
Rise Time220 ns--
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time22 ns--
Unit Weight0.211644 oz0.211644 oz-
Tradename-TrenchFET-
Series-SUP-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SUP40N25-60-E3 MOSFET 250V 40A 300W 60mohm @ 10V
SUP40N10-30-E3 MOSFET RECOMMENDED ALT 78-SUP50N10-21P-GE3
Vishay
Vishay
SUP40N25-60-E3 IGBT Transistors MOSFET 250V 40A 300W 60mohm @ 10V
SUP40N10-30-E3 MOSFET N-CH 100V 40A TO220AB
SUP40N10-30-GE3 MOSFET N-CH 100V 38.5A TO220AB
SUP40N06 Nuevo y original
SUP40N06-25 Nuevo y original
SUP40N06-25L MOSFET 60V 40A 90W
SUP40N10 Nuevo y original
SUP40N10-25-E3 Nuevo y original
SUP40N10-30 Nuevo y original
SUP40N10-30-E3 ,SUP40N10 Nuevo y original
SUP40N10-30-E3,SUP40N10- Nuevo y original
SUP40N10-35 Nuevo y original
SUP40N25-60 Nuevo y original
SUP40N25-60(40A 250V) Nuevo y original
Top