 |  | | |
| PartNumber | SUM40N15-38-E3 | SUM40N15 | SUM40N15-38 |
| Description | MOSFET N-CH 150V 40A D2PAK | ||
| Manufacturer | Vishay Siliconix | VISHAY | - |
| Product Category | FETs - Single | FETs - Single | - |
| Series | TrenchFETR | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Part Aliases | SUM40N15-38 | - | - |
| Unit Weight | 0.050717 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 175°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 1 Channel | - | - |
| Supplier Device Package | TO-263 (D2Pak) | - | - |
| Configuration | Single | - | - |
| FET Type | MOSFET N-Channel, Metal Oxide | - | - |
| Power Max | 3.75W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Drain to Source Voltage Vdss | 150V | - | - |
| Input Capacitance Ciss Vds | 2500pF @ 25V | - | - |
| FET Feature | Standard | - | - |
| Current Continuous Drain Id 25°C | 40A (Tc) | - | - |
| Rds On Max Id Vgs | 38 mOhm @ 15A, 10V | - | - |
| Vgs th Max Id | 4V @ 250μA | - | - |
| Gate Charge Qg Vgs | 60nC @ 10V | - | - |
| Pd Power Dissipation | 3.75 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 90 ns | - | - |
| Rise Time | 130 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Rds On Drain Source Resistance | 38 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Forward Transconductance Min | 10 S | - | - |
| Channel Mode | Enhancement | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay |
SUM40N15-38-E3 | MOSFET N-CH 150V 40A D2PAK | |
| SUM40N15 | Nuevo y original | ||
| SUM40N15-38 | Nuevo y original | ||
| SUM40N1538E3 | Power Field-Effect Transistor, 40A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |