PartNumber | STW75N60DM6 | STW75N60M6 | STW75N20 |
Description | MOSFET N-channel 600 V, 0.032 Ohm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package | MOSFET N-channel 600 V, 0.031 Ohm typ., 72 A MDmesh M6 Power MOSFET in TO-247 package | MOSFET POWER MOSFET |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | N |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 200 V |
Id Continuous Drain Current | 72 A | 72 A | 75 A |
Rds On Drain Source Resistance | 36 mOhms | 36 mOhms | 34 mOhms |
Qg Gate Charge | 117 nC | 106 nC | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | - | Tube |
Series | DM6 | STW75N60M6 | STW75N20 |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 600 | 600 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs th Gate Source Threshold Voltage | - | 3.25 V | - |
Vgs Gate Source Voltage | - | 10 V | 20 V |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 446 W | 190 W |
Tradename | - | MDmesh | - |
Transistor Type | - | 1 N Channel | 1 N-Channel |
Height | - | - | 20.15 mm |
Length | - | - | 15.75 mm |
Width | - | - | 5.15 mm |
Fall Time | - | - | 29 ns |
Rise Time | - | - | 33 ns |
Typical Turn Off Delay Time | - | - | 75 ns |
Typical Turn On Delay Time | - | - | 53 ns |
Unit Weight | - | - | 1.340411 oz |