PartNumber | STW56N60M2-4 | STW56N60M2 | STW56N60DM2 |
Description | MOSFET N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package | MOSFET N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package | MOSFET N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-4 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 52 A | 52 A | 50 A |
Rds On Drain Source Resistance | 45 mOhms | 55 mOhms | 60 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 3 V |
Vgs Gate Source Voltage | 25 V | 10 V | 25 V |
Qg Gate Charge | 91 nC | 91 nC | 90 nC |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 350 W | 350 W | 360 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | MDmesh | MDmesh | MDmesh |
Packaging | Tube | Tube | - |
Series | STW56N60M2-4 | STW56N60M2 | STW56N60DM2 |
Transistor Type | 1 N-Channel | 1 N-Channel Power MOSFET | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 14 ns | 14 ns | 12 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 26.5 ns | 26.5 ns | 60 ns |
Factory Pack Quantity | 600 | 600 | 600 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 119 ns | 119 ns | 130 ns |
Typical Turn On Delay Time | 18 ns | 18 ns | 24 ns |
Unit Weight | - | 1.340411 oz | 1.340411 oz |
Minimum Operating Temperature | - | - | - 55 C |