PartNumber | STW50N65DM2AG | STW50NB20 |
Description | MOSFET Automotive-grade N-channel 650 V, 0.070 Ohm typ., 38 A MDmesh DM2 Power MOSFET in a TO-247 package | MOSFET N-Ch 200 Volt 50 Amp |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 200 V |
Id Continuous Drain Current | 38 A | 50 A |
Rds On Drain Source Resistance | 87 mOhms | 55 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | - |
Vgs Gate Source Voltage | 25 V | 30 V |
Qg Gate Charge | 70 nC | - |
Minimum Operating Temperature | - 55 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 300 W | 280 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Qualification | AEC-Q101 | - |
Tradename | MDmesh | - |
Height | 5.15 mm | 20.15 mm |
Length | 20.15 mm | 15.75 mm |
Product | Power MOSFET | - |
Series | STW50N65DM2AG | STW50N |
Transistor Type | 1 N-Channel | 1 N-Channel |
Type | High Voltage | MOSFET |
Width | 15.75 mm | 5.15 mm |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 10.5 ns | 27 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 21 ns | 65 ns |
Factory Pack Quantity | 600 | 30 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 89 ns | - |
Typical Turn On Delay Time | 22.5 ns | 35 ns |
Unit Weight | 1.340411 oz | 1.340411 oz |
Packaging | - | Tube |