PartNumber | STW32NM50N | STW32N65M5 |
Description | MOSFET N-Ch 500V 0.13 Ohm 22A MDmesh II FET | MOSFET POWER MOSFET N-CH 650V 24 A |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 650 V |
Id Continuous Drain Current | 13.86 A | 24 A |
Rds On Drain Source Resistance | 130 mOhms | 119 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | - |
Vgs Gate Source Voltage | 25 V | 25 V |
Qg Gate Charge | 62.5 nC | 72 nC |
Pd Power Dissipation | 190 W | 150 W |
Configuration | Single | Single |
Tradename | MDmesh | - |
Packaging | Tube | Tube |
Series | STW32NM50N | STF32N65M5 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 23.6 ns | 16 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 9.5 ns | 12 ns |
Factory Pack Quantity | 600 | 30 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 110 ns | 53 ns |
Typical Turn On Delay Time | 21.5 ns | - |
Unit Weight | 1.340411 oz | 1.340411 oz |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 150 C |
Channel Mode | - | Enhancement |