STW19

STW19NM50N vs STW19NM60N vs STW19NM65N

 
PartNumberSTW19NM50NSTW19NM60NSTW19NM65N
DescriptionMOSFET POWER MOSFET N-CH 500V 13AMOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM)IGBT Transistors MOSFET N-channel 650V
ManufacturerSTMicroelectronicsSTMicroelectronicsST
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V600 V-
Id Continuous Drain Current14 A13 A-
Rds On Drain Source Resistance250 mOhms260 mOhms-
Vgs th Gate Source Threshold Voltage4 V3 V-
Vgs Gate Source Voltage2 V25 V-
Qg Gate Charge34 nC35 nC-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation110 W110 W-
ConfigurationSingleSingle-
TradenameMDmeshMDmesh-
PackagingTubeTube-
SeriesSTW19NM50NSTW19NM60N-
Transistor TypeN-Channel1 N-Channel-
TypeMDmesh II Power MOSFET--
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time17 ns25 ns-
Product TypeMOSFETMOSFET-
Rise Time16 ns15 ns-
Factory Pack Quantity600600-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time61 ns55 ns-
Typical Turn On Delay Time12 ns12 ns-
Unit Weight1.340411 oz1.340411 oz-
Minimum Operating Temperature-- 55 C-
Channel Mode-Enhancement-
Qualification-AEC-Q101-
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STW19NM50N MOSFET POWER MOSFET N-CH 500V 13A
STW19NM60N MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM)
STW19NM65N IGBT Transistors MOSFET N-channel 650V
STW19NM50N MOSFET N-CH 500V 14A TO-247
STW19NM60N MOSFET N-CH 600V 13A TO-247
STW19NM50N,19NM50N Nuevo y original
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