STULED6

STULED656 vs STULED623 vs STULED625

 
PartNumberSTULED656STULED623STULED625
DescriptionMOSFET N-CH 650V 1.1Ohm 6A Pwr MOSFETMOSFET N-Ch 620V 3.0 Ohm 3.0A IPAKMOSFET N-Ch 620V 1.28 Ohm 5.0A IPAK
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-251-3TO-251-3TO-251-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V620 V620 V
Id Continuous Drain Current6 A3 A5 A
Rds On Drain Source Resistance1.1 Ohms3 Ohms1.28 Ohms
Vgs th Gate Source Threshold Voltage3.6 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge34 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation70 W--
ConfigurationSingleSingleSingle
PackagingTubeTubeTube
SeriesSTULED656STULED623STULED625
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time24 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time10 ns--
Factory Pack Quantity7530003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time44 ns--
Typical Turn On Delay Time14 ns--
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STULED656 MOSFET N-CH 650V 1.1Ohm 6A Pwr MOSFET
STULED623 MOSFET N-Ch 620V 3.0 Ohm 3.0A IPAK
STULED625 MOSFET N-Ch 620V 1.28 Ohm 5.0A IPAK
STULED625 RF Bipolar Transistors MOSFET N-Ch 620V 1.28 Ohm 5.0A IPAK
STULED623 RF Bipolar Transistors MOSFET N-Ch 620V 3.0 Ohm 3.0A IPAK
STULED656 MOSFET N-CH 650V IPAK
STULED602 MOSFET N-Ch 600V 4Ohm 2A PWR FET IPAK
STULED625H MOSFET N-Ch 620V 1.7 Ohm 4.5A Power FET IPAK
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