| PartNumber | STU9N60M2 | STU9N65M2 |
| Description | MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2 | MOSFET N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V |
| Id Continuous Drain Current | 5.5 A | 5 A |
| Rds On Drain Source Resistance | 780 mOhms | 900 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
| Vgs Gate Source Voltage | 25 V | 25 V |
| Qg Gate Charge | 10 nC | 10 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 60 W | 60 W |
| Configuration | Single | Single |
| Tradename | MDmesh | MDmesh |
| Packaging | Tube | Tube |
| Series | STU9N60M2 | STU9N65M2 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 13.5 ns | 18 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7.5 ns | 6.6 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 22 ns | 22.5 ns |
| Typical Turn On Delay Time | 8.8 ns | 7.5 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Product | - | Power MOSFET |