STU6N6

STU6N62K3 vs STU6N60M2 vs STU6N60DM2

 
PartNumberSTU6N62K3STU6N60M2STU6N60DM2
DescriptionMOSFET N-Ch, 620V-1.1ohms 5.5AMOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-251-3TO-251-3IPAK-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage620 V650 V600 V
Id Continuous Drain Current5.5 A4.5 A5 A
Rds On Drain Source Resistance1.28 Ohms1.2 Ohms1.1 Ohms
Vgs Gate Source Voltage30 V25 V25 V
Qg Gate Charge34 nC8 nC6.2 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation90 W60 W60 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameSuperMESHMDmesh-
PackagingTubeTube-
Height6.2 mm--
Length6.6 mm--
SeriesSTU6N62K3STU6N60M2-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width2.4 mm--
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time19 ns22.5 ns19.6 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time12.5 ns7.4 ns5.6 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time27 ns24 ns12 ns
Typical Turn On Delay Time13 ns9.5 ns9.2 ns
Unit Weight0.139332 oz0.139332 oz-
Vgs th Gate Source Threshold Voltage-3 V3.25 V
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STU6N65M2-S MOSFET
STU6N62K3 MOSFET N-Ch, 620V-1.1ohms 5.5A
STU6N65M2 MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
STU6N60M2 MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2
STU6N65K3 MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3
STU6N60DM2 MOSFET
STU6N65M2 Darlington Transistors MOSFET POWER MOSFET
STU6N65K3 RF Bipolar Transistors MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3
STU6N62K3 MOSFET N-CH 620V 5.5A IPAK
STU6N60M2 MOSFET N-CH 600V IPAK
STU6N62 Nuevo y original
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