PartNumber | STP35N60M2-EP | STP35N65DM2 | STP35N60DM2 |
Description | MOSFET | MOSFET | MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220 package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
Series | STP35N60M2-EP | STP35N65DM2 | STP35N60DM2 |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Technology | - | Si | Si |
RoHS | - | - | Y |
Mounting Style | - | - | Through Hole |
Package / Case | - | - | TO-220-3 |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | N-Channel |
Vds Drain Source Breakdown Voltage | - | - | 600 V |
Id Continuous Drain Current | - | - | 28 A |
Rds On Drain Source Resistance | - | - | 110 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 3 V |
Vgs Gate Source Voltage | - | - | 25 V |
Qg Gate Charge | - | - | 54 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 210 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Tradename | - | - | MDmesh |
Fall Time | - | - | 10.7 ns |
Rise Time | - | - | 17 ns |
Typical Turn Off Delay Time | - | - | 68 ns |
Typical Turn On Delay Time | - | - | 21.2 ns |
Unit Weight | - | - | 0.011640 oz |