STP25NM60N

STP25NM60ND vs STP25NM60N

 
PartNumberSTP25NM60NDSTP25NM60N
DescriptionMOSFET N-channel 600V, 21A FDMesh IIMOSFET N-Ch 600 V 0.14 Ohm 20 A 2nd Gen MDmesh
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current21 A20 A
Rds On Drain Source Resistance160 mOhms140 mOhms
Vgs Gate Source Voltage25 V25 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation160 W160 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingTubeTube
Height9.15 mm9.15 mm
Length10.4 mm10.4 mm
SeriesSTB25NM60NSTP25NM60N
Transistor Type1 N-Channel1 N-Channel
Width4.6 mm4.6 mm
BrandSTMicroelectronicsSTMicroelectronics
Fall Time40 ns24 ns
Product TypeMOSFETMOSFET
Rise Time30 ns18 ns
Factory Pack Quantity100050
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time50 ns94 ns
Typical Turn On Delay Time60 ns24.5 ns
Unit Weight0.011640 oz0.011640 oz
Type-MOSFET
Forward Transconductance Min-17 S
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STP25NM60ND MOSFET N-channel 600V, 21A FDMesh II
STP25NM60N MOSFET N-Ch 600 V 0.14 Ohm 20 A 2nd Gen MDmesh
STP25NM60N MOSFET N-CH 600V 21A TO-220
STP25NM60ND MOSFET N-CH 600V 21A TO-220
STP25NM60N P25NM60N Nuevo y original
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