STLD12

STLD128DNT4 vs STLD125N4F6AG

 
PartNumberSTLD128DNT4STLD125N4F6AG
DescriptionBipolar Transistors - BJT NPN power transistorMOSFET Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 dual side cooling package
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryBipolar Transistors - BJTMOSFET
RoHSYY
Mounting StyleSMD/SMTSMD/SMT
Package / CaseDPAK-3PowerFLAT-5x6-8
Transistor PolarityNPNN-Channel
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max400 V-
Emitter Base Voltage VEBO18 V-
Maximum DC Collector Current6 A-
Minimum Operating Temperature- 65 C- 55 C
Maximum Operating Temperature+ 150 C+ 175 C
SeriesSTL128DNSTLD125N4F6AG
DC Current Gain hFE Max10-
Height2.4 mm-
Length6.2 mm-
PackagingReel-
Width6.6 mm-
BrandSTMicroelectronicsSTMicroelectronics
Continuous Collector Current3 A-
DC Collector/Base Gain hfe Min8-
Pd Power Dissipation20 W130 W
Product TypeBJTs - Bipolar TransistorsMOSFET
Factory Pack Quantity25002500
SubcategoryTransistorsMOSFETs
Unit Weight0.009185 oz-
Technology-Si
Number of Channels-1 Channel
Vds Drain Source Breakdown Voltage-40 V
Id Continuous Drain Current-120 A
Rds On Drain Source Resistance-2.4 mOhms
Vgs th Gate Source Threshold Voltage-2 V
Vgs Gate Source Voltage-20 V
Qg Gate Charge-91 nC
Channel Mode-Enhancement
Qualification-AEC-Q101
Tradename-STripFET
Transistor Type-1 N-Channel
Fall Time-220 ns
Rise Time-300 ns
Typical Turn Off Delay Time-255 ns
Typical Turn On Delay Time-47 ns
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STLD128DNT4 Bipolar Transistors - BJT NPN power transistor
STLD125N4F6AG MOSFET Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 dual side cooling package
STLD128DNT4 Bipolar Transistors - BJT NPN power transisto
STLD125N4F6AG MOSFET N-CH 40V 120A POWERFLAT
STLD128DN Nuevo y original
STLD128DN-1 Nuevo y original
STLD128DNCT Nuevo y original
STLD128DNT Nuevo y original
STLD128DNT4G Nuevo y original
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