PartNumber | STLD128DNT4 | STLD125N4F6AG |
Description | Bipolar Transistors - BJT NPN power transistor | MOSFET Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 dual side cooling package |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | Bipolar Transistors - BJT | MOSFET |
RoHS | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | DPAK-3 | PowerFLAT-5x6-8 |
Transistor Polarity | NPN | N-Channel |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 400 V | - |
Emitter Base Voltage VEBO | 18 V | - |
Maximum DC Collector Current | 6 A | - |
Minimum Operating Temperature | - 65 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C |
Series | STL128DN | STLD125N4F6AG |
DC Current Gain hFE Max | 10 | - |
Height | 2.4 mm | - |
Length | 6.2 mm | - |
Packaging | Reel | - |
Width | 6.6 mm | - |
Brand | STMicroelectronics | STMicroelectronics |
Continuous Collector Current | 3 A | - |
DC Collector/Base Gain hfe Min | 8 | - |
Pd Power Dissipation | 20 W | 130 W |
Product Type | BJTs - Bipolar Transistors | MOSFET |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | Transistors | MOSFETs |
Unit Weight | 0.009185 oz | - |
Technology | - | Si |
Number of Channels | - | 1 Channel |
Vds Drain Source Breakdown Voltage | - | 40 V |
Id Continuous Drain Current | - | 120 A |
Rds On Drain Source Resistance | - | 2.4 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2 V |
Vgs Gate Source Voltage | - | 20 V |
Qg Gate Charge | - | 91 nC |
Channel Mode | - | Enhancement |
Qualification | - | AEC-Q101 |
Tradename | - | STripFET |
Transistor Type | - | 1 N-Channel |
Fall Time | - | 220 ns |
Rise Time | - | 300 ns |
Typical Turn Off Delay Time | - | 255 ns |
Typical Turn On Delay Time | - | 47 ns |