PartNumber | STL8DN6LF3 | STL8DN6LF6AG |
Description | MOSFET Dual N-Ch 60V 7.8A 22.5mOhm STripFETIII | MOSFET Automotive-grade dual N-channel 60 V, 21 mOhm typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 double island package |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PowerFLAT-5x6-8 | PowerFLAT-5x6-8 |
Number of Channels | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V |
Id Continuous Drain Current | 7.8 A | 32 A |
Rds On Drain Source Resistance | 22.5 mOhms | 31 mOhms |
Configuration | Dual | Dual |
Qualification | AEC-Q101 | AEC-Q101 |
Tradename | STripFET | STripFET |
Packaging | Reel | Reel |
Series | STL8DN6LF3 | STL8DN6LF6AG |
Transistor Type | 2 N-Channel | 2 N-Channel |
Brand | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Vgs th Gate Source Threshold Voltage | - | 1 V |
Vgs Gate Source Voltage | - | 20 V |
Qg Gate Charge | - | 27 nC |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 175 C |
Pd Power Dissipation | - | 55 W |
Channel Mode | - | Enhancement |
Fall Time | - | 7 ns |
Rise Time | - | 20 ns |
Typical Turn Off Delay Time | - | 56 ns |
Typical Turn On Delay Time | - | 9.6 ns |
Unit Weight | - | 0.048678 oz |