STL8DN6

STL8DN6LF3 vs STL8DN6LF6AG

 
PartNumberSTL8DN6LF3STL8DN6LF6AG
DescriptionMOSFET Dual N-Ch 60V 7.8A 22.5mOhm STripFETIIIMOSFET Automotive-grade dual N-channel 60 V, 21 mOhm typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 double island package
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePowerFLAT-5x6-8PowerFLAT-5x6-8
Number of Channels2 Channel2 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current7.8 A32 A
Rds On Drain Source Resistance22.5 mOhms31 mOhms
ConfigurationDualDual
QualificationAEC-Q101AEC-Q101
TradenameSTripFETSTripFET
PackagingReelReel
SeriesSTL8DN6LF3STL8DN6LF6AG
Transistor Type2 N-Channel2 N-Channel
BrandSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFET
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Vgs th Gate Source Threshold Voltage-1 V
Vgs Gate Source Voltage-20 V
Qg Gate Charge-27 nC
Minimum Operating Temperature-- 55 C
Maximum Operating Temperature-+ 175 C
Pd Power Dissipation-55 W
Channel Mode-Enhancement
Fall Time-7 ns
Rise Time-20 ns
Typical Turn Off Delay Time-56 ns
Typical Turn On Delay Time-9.6 ns
Unit Weight-0.048678 oz
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STL8DN6LF3 MOSFET Dual N-Ch 60V 7.8A 22.5mOhm STripFETIII
STL8DN6LF6AG MOSFET Automotive-grade dual N-channel 60 V, 21 mOhm typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 double island package
STL8DN6LF3 IGBT Transistors MOSFET Dual N-Ch 60V 7.8A 22.5mOhm STripFETIII
STL8DN6LF6AG MOSFET N-CH 60V 32A POWERFLAT
STL8DN6LF3-CUT TAPE Nuevo y original
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