PartNumber | STL7N10F7 | STL7N60M2 | STL7N6F7 |
Description | MOSFET N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package | MOSFET N-channel 600 V, 0.92 Ohm typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 HV package | MOSFET N-channel 60 V, 0.019 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerFLAT-3.3x3.3-8 | PowerFLAT-5x5-12 | PowerFLAT-2x2-6 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 600 V | 60 V |
Id Continuous Drain Current | 7 A | 5 A | 7 A |
Rds On Drain Source Resistance | 35 mOhms | 1.05 Ohms | 21 mOhms |
Vgs th Gate Source Threshold Voltage | 4.5 V | 2 V | 2 V |
Vgs Gate Source Voltage | 20 V | 25 V | 20 V |
Qg Gate Charge | 14 nC | 8.8 nC | 8 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 2.9 W | 67 W | 2.4 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | STripFET | MDmesh | STripFET |
Packaging | Reel | Reel | - |
Series | STL7N10F7 | STL7N60M2 | STL7N6F7 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 4.6 ns | 15.9 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 14 ns | 7.2 ns | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 14.8 ns | 19.3 ns | - |
Typical Turn On Delay Time | 9.8 ns | 7.6 ns | - |
Unit Weight | - | 0.002751 oz | - |