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STL60N3

STL60N32N3LL vs STL60N3LLH5-CUT TAPE vs STL60N3LLH5

 
PartNumberSTL60N32N3LLSTL60N3LLH5-CUT TAPESTL60N3LLH5
DescriptionMOSFET Dual N-Ch 30V 15A pwr MOSFETMOSFET N-CH 30V 17A POWERFLAT
ManufacturerSTMicroelectronics-ST
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerFLAT-8--
Number of Channels2 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current13.6 A--
Rds On Drain Source Resistance8.5 mOhms, 5 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge6.6 nC, 17 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation23 W, 50 W--
ConfigurationDual-Single
PackagingReel-Reel
SeriesSTL60N32N3LL-N-channel STripFET
Transistor Type2 N-Channel-1 N-Channel
BrandSTMicroelectronics--
Fall Time6 ns, 12 ns--
Product TypeMOSFET--
Rise Time15.6 ns, 30 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14.2 ns, 37 ns--
Typical Turn On Delay Time10.8 ns, 9.5 ns--
Package Case--PowerFlat-8
Pd Power Dissipation--60 W
Vgs Gate Source Voltage--+/- 22 V
Id Continuous Drain Current--60 A
Vds Drain Source Breakdown Voltage--30 V
Vgs th Gate Source Threshold Voltage--1 V
Rds On Drain Source Resistance--6.3 mOhms
Qg Gate Charge--8 nC
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics 		STL60N32N3LL MOSFET Dual N-Ch 30V 15A pwr MOSFET
STL60N32N3LL MOSFET 2N-CH 30V 32A/60A PWRFLAT
STL60N3LLH5 MOSFET N-CH 30V 17A POWERFLAT
STL60N3LLH5-CUT TAPE Nuevo y original
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