PartNumber | STL45N10F7AG | STL45N60DM6 | STL45N65M5 |
Description | MOSFET Automotive-grade N-channel 100 V, 20 mOhm typ., 18 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | MOSFET | MOSFET N-Ch 650 V 0.075 Ohm 22.5 A Mdmesh |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerFLAT-5x6-8 | PowerFLAT8x8-5 | PowerFLAT-8x8-HV-5 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 600 V | 650 V |
Id Continuous Drain Current | 18 A | 25 A | 22.5 A |
Rds On Drain Source Resistance | 20 mOhms | 110 mOhms | 75 mOhms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 3.25 V | 4 V |
Vgs Gate Source Voltage | 20 V | 25 V | 25 V |
Qg Gate Charge | 19.5 nC | 44 nC | 82 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 72 W | 160 W | 160 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | - | - |
Tradename | STripFET | - | MDmesh |
Series | STL45N10F7AG | - | STL45N65M5 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 5 ns | 7.3 ns | 9.3 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 5.5 ns | 5.3 ns | 11 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 17 ns | 50 ns | - |
Typical Turn On Delay Time | 15 ns | 15 ns | - |
Moisture Sensitive | - | Yes | Yes |
Packaging | - | - | Reel |