STL40D

STL40DN3LLH5 vs STL40DN3LLH vs STL40DN3LLH5(40DN3)

 
PartNumberSTL40DN3LLH5STL40DN3LLHSTL40DN3LLH5(40DN3)
DescriptionMOSFET Dual N-Ch 30V 11A 0.016 Ohm STripFET V
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerFLAT-5x6-8--
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance16 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage22 V--
Qg Gate Charge4.5 nC--
Pd Power Dissipation60 W--
ConfigurationDualDual-
QualificationAEC-Q101--
TradenameSTripFET--
PackagingReelDigi-ReelR Alternate Packaging-
SeriesSTL40DN3LLH5STripFET V-
Transistor Type2 N-Channel2 N-Channel-
BrandSTMicroelectronics--
Fall Time2.8 ns2.8 ns-
Product TypeMOSFET--
Rise Time22 ns22 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight1.058219 oz--
Package Case-8-PowerVDFN-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-PowerFlat (5x6)-
FET Type-2 N-Channel (Dual)-
Power Max-60W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-475pF @ 25V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-40A-
Rds On Max Id Vgs-18 mOhm @ 5.5A, 10V-
Vgs th Max Id-1.5V @ 250μA-
Gate Charge Qg Vgs-4.5nC @ 4.5V-
Pd Power Dissipation-60 W-
Vgs Gate Source Voltage-22 V-
Id Continuous Drain Current-40 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-1.5 V-
Rds On Drain Source Resistance-16 mOhms-
Qg Gate Charge-4.5 nC-
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STL40DN3LLH5 MOSFET Dual N-Ch 30V 11A 0.016 Ohm STripFET V
STL40DN3LLH5 MOSFET 2N-CH 30V 40A POWERFLAT56
STL40DN3LLH5-CUT TAPE Nuevo y original
STL40DN3LLH Nuevo y original
STL40DN3LLH5(40DN3) Nuevo y original
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