PartNumber | STL160N4F7 | STL160N3LLH6 | STL160NS3LLH7 |
Description | MOSFET POWER MOSFET | MOSFET N-Ch 30V 0.0011 Ohm 35A STripFET VI | MOSFET N-channel 30 V, 0.0016 Ohm typ., 160 A STripFET H7 Power MOSFETs plus monolithic Schottky in a PowerFLAT 5x6 package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerFLAT-5x6-8 | PowerFLAT-5x6-8 | PowerFLAT-5x6-8 |
Tradename | STripFET | STripFET | - |
Series | STL160N4F7 | STL160N3LLH6 | STL160NS3LLH7 |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
RoHS | - | Y | Y |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 30 V | 30 V |
Id Continuous Drain Current | - | 160 A | 36 A |
Rds On Drain Source Resistance | - | 1.1 mOhms | 2.1 mOhms |
Vgs th Gate Source Threshold Voltage | - | 1 V | 2.3 V |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 61.5 nC | 20 nC |
Pd Power Dissipation | - | 80 W | 4.8 W |
Configuration | - | Single | Single |
Packaging | - | Reel | Reel |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 54 ns | 19.5 ns |
Rise Time | - | 32 ns | 21.3 ns |
Unit Weight | - | 1.058219 oz | - |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Channel Mode | - | - | Enhancement |
Typical Turn Off Delay Time | - | - | 50.7 ns |
Typical Turn On Delay Time | - | - | 12.4 ns |