STL10N

STL10N3LLH5 vs STL10N60M6 vs STL10N60M2

 
PartNumberSTL10N3LLH5STL10N60M6STL10N60M2
DescriptionMOSFET N-channel 30 V 0.015 Ohm 9A STripFET VMOSFETMOSFET N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a PowerFLAT(TM) 5x6 HV package
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySi-Si
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerFLAT-3.3x3.3-8PowerFLAT5x6-4PowerFLAT-5x6-HV-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V600 V600 V
Id Continuous Drain Current9 A5.5 A5.5 A
Rds On Drain Source Resistance19 mOhms660 mOhms660 mOhms
Vgs Gate Source Voltage22 V25 V25 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation50 W48 W48 W
ConfigurationSingleSingleSingle
QualificationAEC-Q101--
TradenameSTripFET-MDmesh
PackagingReel-Reel
SeriesSTL10N3LLH5-STL10N60M2
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Vgs th Gate Source Threshold Voltage-3.25 V3 V
Qg Gate Charge-8.8 nC13.5 nC
Channel Mode-EnhancementEnhancement
Fall Time-10 ns13.2 ns
Rise Time-8.2 ns8 ns
Typical Turn Off Delay Time-23 ns32.5 ns
Typical Turn On Delay Time-11 ns8.8 ns
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STL10N3LLH5 MOSFET N-channel 30 V 0.015 Ohm 9A STripFET V
STL10N65M2 MOSFET N-channel 650 V, 0.85 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package
STL10N60M6 MOSFET
STL10N60M2 MOSFET N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a PowerFLAT(TM) 5x6 HV package
STL10N60M2 IGBT Transistors MOSFET POWER MOSFET
STL10N3LLH5 MOSFET N-CH 30V 9A POWERFLAT
STL10N65M2 MOSFET N-CH 650V 4.5A POWERFLAT
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