PartNumber | STI13005-1 | STI13NM60N |
Description | Bipolar Transistors - BJT NPN Fast Switching 700V Power Trans | MOSFET N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | Bipolar Transistors - BJT | MOSFET |
RoHS | Y | Y |
Mounting Style | Through Hole | Through Hole |
Package / Case | IPAK-3 | TO-262-3 |
Transistor Polarity | NPN | N-Channel |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 400 V | - |
Emitter Base Voltage VEBO | 9 V to 18 V | - |
Collector Emitter Saturation Voltage | 5 V | - |
Maximum DC Collector Current | 6 A | - |
Minimum Operating Temperature | - 65 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | STI13005-1 | STI13NM60N |
DC Current Gain hFE Max | 24 | - |
Packaging | Tube | Tube |
Brand | STMicroelectronics | STMicroelectronics |
Continuous Collector Current | 3 A | - |
DC Collector/Base Gain hfe Min | 15 | - |
Pd Power Dissipation | 30 W | 90 W |
Product Type | BJTs - Bipolar Transistors | MOSFET |
Factory Pack Quantity | 3000 | 1000 |
Subcategory | Transistors | MOSFETs |
Unit Weight | 0.139332 oz | 0.050717 oz |
Technology | - | Si |
Number of Channels | - | 1 Channel |
Vds Drain Source Breakdown Voltage | - | 600 V |
Id Continuous Drain Current | - | 11 A |
Rds On Drain Source Resistance | - | 360 mOhms |
Vgs Gate Source Voltage | - | 25 V |
Qg Gate Charge | - | 30 nC |
Channel Mode | - | Enhancement |
Tradename | - | MDmesh |
Transistor Type | - | 1 N-Channel |
Fall Time | - | 10 ns |
Rise Time | - | 8 ns |
Typical Turn Off Delay Time | - | 30 ns |
Typical Turn On Delay Time | - | 3 ns |