PartNumber | STGY40NC60VD | STGY50NC60WD | STGY80H65DFB |
Description | IGBT Transistors N Ch 600V 50A Max247 | IGBT Transistors 600V 65A N-Channel | IGBT Transistors Trench gte FieldStop IGBT 650V 80A |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | Max247-3 | Max247-3 | Max247-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 600 V | 600 V | 650 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
Series | STGY40NC60VD | STGY50NC60WD | STGY80H65 |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 80 A | 110 A | 80 A |
Height | 20.3 mm | 20.3 mm | - |
Length | 15.9 mm | 15.9 mm | - |
Width | 5.3 mm | 5.3 mm | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 600 | 600 | 30 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | PowerMESH | - | - |
Unit Weight | 0.070548 oz | - | - |
Collector Emitter Saturation Voltage | - | - | 1.9 V |
Continuous Collector Current at 25 C | - | - | 120 A |
Pd Power Dissipation | - | - | 469 W |
Gate Emitter Leakage Current | - | - | 250 nA |