STGW50H

STGW50HF60S vs STGW50H60DF vs STGW50H65F

 
PartNumberSTGW50HF60SSTGW50H60DFSTGW50H65F
DescriptionIGBT Transistors 60A 600V Very Low Drop IGBT 600VcesIGBT Transistors 50A 600V FST IGBT Ultrafast Diode
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBTs - SingleIGBTs - Single-
Series600-650V IGBTs600-650V IGBTs-
PackagingTubeTube-
Unit Weight0.229281 oz0.229281 oz-
Mounting StyleThrough HoleThrough Hole-
Package CaseTO-247-3TO-247-3-
Input TypeStandardStandard-
Mounting TypeThrough HoleThrough Hole-
Supplier Device PackageTO-247-3TO-247-
ConfigurationSingle--
Power Max284W360W-
Reverse Recovery Time trr-55ns-
Current Collector Ic Max110A100A-
Voltage Collector Emitter Breakdown Max600V600V-
IGBT Type-Trench Field Stop-
Current Collector Pulsed Icm130A200A-
Vce on Max Vge Ic1.45V @ 15V, 30A1.8V @ 15V, 50A-
Switching Energy250μJ (on), 4.2mJ (off)890μJ (on), 860μJ (off)-
Gate Charge200nC217nC-
Td on off 25°C50ns/220ns62ns/178ns-
Test Condition400V, 30A, 10 Ohm, 15V400V, 50A, 10 Ohm, 15V-
Pd Power Dissipation284 W360 W-
Maximum Operating Temperature+ 150 C+ 150 C-
Minimum Operating Temperature- 55 C- 55 C-
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.15 V1.8 V-
Continuous Collector Current at 25 C110 A100 A-
Gate Emitter Leakage Current+/- 100 nA250 nA-
Maximum Gate Emitter Voltage+/- 20 V+/- 20 V-
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STGW50HF60SD IGBT 600V 110A 284W TO247
STGW50HF60S IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces
STGW50H60DF IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
STGW50H65F Nuevo y original
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