STGW30H

STGW30H60DFB vs STGW30H60DLFB vs STGW30H60DF

 
PartNumberSTGW30H60DFBSTGW30H60DLFBSTGW30H60DF
DescriptionIGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speedIGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speedIGBT Transistors 600V 30A High Speed Trench Gate IGBT
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-247-3TO-247-3TO-247
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max600 V-600 V
Collector Emitter Saturation Voltage1.55 V-2.4 V
Maximum Gate Emitter Voltage20 V-20 V
Continuous Collector Current at 25 C60 A-60 A
Pd Power Dissipation260 W-260 W
Minimum Operating Temperature- 55 C-- 40 C
Maximum Operating Temperature+ 175 C-+ 175 C
SeriesSTGW30H60DFBSTGW30H60DLFBSTGW30H60DF
PackagingTubeTubeTube
Continuous Collector Current Ic Max30 A--
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current250 nA-250 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity600600600
SubcategoryIGBTsIGBTsIGBTs
Unit Weight1.340411 oz1.340411 oz0.229281 oz
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STGW30H60DFB IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
STGW30H65FB IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
STGW30H60DLFB IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
STGW30H60DF IGBT Transistors 600V 30A High Speed Trench Gate IGBT
STGW30H60DFB IGBT 600V 60A 260W TO247
STGW30H60DF IGBT Transistors 600V 30A High Speed Trench Gate IGBT
STGW30H65FB IGBT Transistors IGBT & Power Bipola
STGW30H60DLFB IGBT HB 600V 30A HS TO247
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