STGW15

STGW15M120DF3 vs STGW15H120DF2 vs STGW15H120F2

 
PartNumberSTGW15M120DF3STGW15H120DF2STGW15H120F2
DescriptionIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low lossIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speedIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-247-3TO-247-3TO-247-3
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max1200 V1200 V1200 V
Collector Emitter Saturation Voltage1.85 V2.1 V2.1 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C30 A30 A30 A
Pd Power Dissipation283 W259 W259 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
SeriesSTGW15M120DF3STGW15H120DF2STGW15H120F2
PackagingTubeTubeTube
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current250 nA250 nA250 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity600600600
SubcategoryIGBTsIGBTsIGBTs
Unit Weight1.340411 oz1.340411 oz1.340411 oz
Continuous Collector Current Ic Max-15 A15 A
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STGW15M120DF3 IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
STGW15H120DF2 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
STGW15H120F2 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
STGW15S120DF3 IGBT Transistors IGBT & Power Bipolar
STGW15M120DF3 IGBT Transistors IGBT & Power Bipola
STGW15H120F2 IGBT Transistors IGBT & Power Bipola
STGW15H120DF2 IGBT H-SERIES 1200V 15A TO-247
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