STGP7N

STGP7NB60KD vs STGP7NC60H vs STGP7NB60HD

 
PartNumberSTGP7NB60KDSTGP7NC60HSTGP7NB60HD
DescriptionIGBT Transistors N-Ch 600 Volt 7 AmpIGBT Transistors V-FAST POWERMESHIGBT 600V 14A 80W TO220
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.8 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C14 A--
Pd Power Dissipation80 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGP7NB60KDPowerMESH-
PackagingTubeTube-
Continuous Collector Current Ic Max14 A--
Height9.15 mm--
Length10.4 mm--
Width4.6 mm--
BrandSTMicroelectronics--
Continuous Collector Current7 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Unit Weight0.211644 oz--
Package Case-TO-220-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-220AB-
Power Max-80W-
Reverse Recovery Time trr---
Current Collector Ic Max-25A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-50A-
Vce on Max Vge Ic-2.5V @ 15V, 7A-
Switching Energy-95μJ (on), 115μJ (off)-
Gate Charge-35nC-
Td on off 25°C-18.5ns/72ns-
Test Condition-390V, 7A, 10 Ohm, 15V-
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STGP7NC60HD IGBT Transistors IGBT
STGP7NB60KD IGBT Transistors N-Ch 600 Volt 7 Amp
STGP7NC60H IGBT Transistors V-FAST POWERMESH
STGP7NC60HD IGBT 600V 25A 80W TO220
STGP7NB60HD IGBT 600V 14A 80W TO220
STGP7NB60KD IGBT 600V 14A 80W TO220
STGP7NB60KD GP7NB60KD Nuevo y original
STGP7NB60F Nuevo y original
STGP7NB60H IGBT Transistors
STGP7NB60HDFP Nuevo y original
STGP7NB60K Nuevo y original
STGP7NB60KDFP Nuevo y original
STGP7NC60HD,GP7NC60HD Nuevo y original
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