STGB7N

STGB7NB60KDT4 vs STGB7NB40LZT4 vs STGB7NB60HDT4

 
PartNumberSTGB7NB60KDT4STGB7NB40LZT4STGB7NB60HDT4
DescriptionIGBT Transistors N-Ch 600 Volt 7 AmpIGBT 430V 14A 100W D2PAKIGBT 600V 14A 80W D2PAK
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseD2PAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.8 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C14 A--
Pd Power Dissipation80 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGB7NB60KD-PowerMESH
PackagingReel-Cut Tape (CT)
Continuous Collector Current Ic Max14 A--
Height4.6 mm--
Length10.4 mm--
Width9.35 mm--
BrandSTMicroelectronics--
Continuous Collector Current7 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.079014 oz--
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--80W
Reverse Recovery Time trr--100ns
Current Collector Ic Max--14A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--56A
Vce on Max Vge Ic--2.8V @ 15V, 7A
Switching Energy--85μJ (off)
Gate Charge--42nC
Td on off 25°C--15ns/75ns
Test Condition--480V, 7A, 10 Ohm, 15V
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STGB7NC60HDT4 IGBT Transistors N-Ch 600 Volt 14 Amp
STGB7NB60KDT4 IGBT Transistors N-Ch 600 Volt 7 Amp
STGB7NC60HT4 IGBT Transistors IGBT 600 V Power Bipolar D2PAK Trans
STGB7NC60HDT4 IGBT 600V 25A 80W D2PAK
STGB7NB40LZT4 IGBT 430V 14A 100W D2PAK
STGB7NB60HDT4 IGBT 600V 14A 80W D2PAK
STGB7NB40LZ Nuevo y original
STGB7NB60 Nuevo y original
STGB7NB60HD Nuevo y original
STGB7NB60K Nuevo y original
STGB7NC60HD Nuevo y original
STGB7NC60HDT4,GB7NC60HDT Nuevo y original
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