STGB6

STGB6M65DF2 vs STGB6NC60HDT4 vs STGB6NC60HD-1

 
PartNumberSTGB6M65DF2STGB6NC60HDT4STGB6NC60HD-1
DescriptionIGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low lossIGBT Transistors PowerMESH TM IGBTIGBT Transistors N Ch 6A 600V
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseD2PAK-3D2PAK-3I2PAK-3
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max650 V600 V600 V
Collector Emitter Saturation Voltage1.55 V2.7 V-
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C12 A--
Pd Power Dissipation88 W80 W-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
SeriesSTGB6M65DF2STGB6NC60HDT4STGB6NC60HD
Continuous Collector Current Ic Max12 A15 A15 A
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current+/- 250 uA100 nA-
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity100010001000
SubcategoryIGBTsIGBTsIGBTs
Packaging-ReelTube
Height-4.6 mm9.35 mm
Length-10.4 mm10.4 mm
Width-9.35 mm4.6 mm
Continuous Collector Current-12 A-
Unit Weight-0.079014 oz0.084199 oz
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STGB6M65DF2 IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
STGB6NC60HDT4 IGBT Transistors PowerMESH TM IGBT
STGB6NC60HD-1 IGBT Transistors N Ch 6A 600V
STGB6NC60HT4 IGBT Transistors PowerMESH TM IGBT
STGB6NC60HDT4 IGBT 600V 15A 56W D2PAK
STGB6M65DF2 IGBT TRENCH 650V 12A D2PAK
STGB6NC60HD-1 IGBT 600V 15A 56W I2PAK
STGB6NC60HT4 IGBT 600V 15A 56W D2PAK
STGB6NC60 Nuevo y original
STGB6NC60HD Nuevo y original
STGB6NC60HDT4,GB6NC60HD, Nuevo y original
STGB6NC60HDT4,GB6NC60HD,6NC60,6N60 Nuevo y original
STGB6NC60HDT4,GB6NC60HD,6NC60,6N60, Nuevo y original
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