PartNumber | STGB20V60F | STGB20V60DF |
Description | IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed | IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y |
Technology | Si | Si |
Package / Case | D2PAK | D2PAK-3 |
Mounting Style | SMD/SMT | SMD/SMT |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 600 V | 600 V |
Collector Emitter Saturation Voltage | 1.8 V | 1.8 V |
Maximum Gate Emitter Voltage | 20 V | 20 V |
Continuous Collector Current at 25 C | 40 A | 40 A |
Pd Power Dissipation | 167 W | 167 W |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C |
Series | STGB20V60F | STGB20V60DF |
Packaging | Reel | Reel |
Brand | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | 250 nA | 250 nA |
Product Type | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | IGBTs | IGBTs |
Unit Weight | 0.070548 oz | 0.079014 oz |
Continuous Collector Current Ic Max | - | 20 A |