PartNumber | STGB14NC60KDT4 | STGB14NC60KD | STGB14NC60KD GB14NC60KD |
Description | IGBT Transistors PowerMESH" IGBT | ||
Manufacturer | STMicroelectronics | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | D2PAK-3 | - | - |
Mounting Style | SMD/SMT | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 600 V | - | - |
Collector Emitter Saturation Voltage | 2.1 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | STGB14NC60KDT4 | - | - |
Packaging | Reel | - | - |
Continuous Collector Current Ic Max | 25 A | - | - |
Height | 4.6 mm | - | - |
Length | 10.4 mm | - | - |
Width | 9.35 mm | - | - |
Brand | STMicroelectronics | - | - |
Continuous Collector Current | 25 A | - | - |
Gate Emitter Leakage Current | 2 A | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.079014 oz | - | - |