 |  | |
| PartNumber | STGB10NB37LZT4 | STGB10NB37LZ |
| Description | IGBT Transistors 10 A - 410 V Int Clamped IGBT | IGBT Transistors 10 A 410V INTERNALLY CLAMPED IGBT |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | D2PAK-3 | D2PAK-3 |
| Mounting Style | SMD/SMT | SMD/SMT |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 440 V | 1.8 V |
| Maximum Gate Emitter Voltage | 16 V | 16 V |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | STGB10NB37LZ | STGB10NB37LZ |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Tube |
| Continuous Collector Current Ic Max | 20 A | 20 A |
| Height | 4.6 mm | 4.6 mm |
| Length | 10.4 mm | 10.4 mm |
| Width | 9.35 mm | 9.35 mm |
| Brand | STMicroelectronics | STMicroelectronics |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 50 |
| Subcategory | IGBTs | IGBTs |
| Unit Weight | 0.079014 oz | 0.079014 oz |
| Collector Emitter Saturation Voltage | - | 1.2 V |
| Continuous Collector Current at 25 C | - | 20 A |
| Pd Power Dissipation | - | 125 W |
| Continuous Collector Current | - | 20 A |
| Gate Emitter Leakage Current | - | 700 uA |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
STMicroelectronics |
STGB10NB37LZT4 | IGBT Transistors 10 A - 410 V Int Clamped IGBT | |
| STGB10NB37LZ | IGBT Transistors 10 A 410V INTERNALLY CLAMPED IGBT | ||
| STGB10NB37LZT4 | IGBT Transistors 10 A - 410 V Int Clamped IGBT | ||
| STGB10NB37LZ | IGBT Transistors 10 A 410V INTERNALLY CLAMPED IGBT | ||
| STGB10NB37LZT4-CUT TAPE | Nuevo y original | ||
| STGB10NB37LZ GB10NB37LZ | Nuevo y original | ||
| STGB10NB37 | Nuevo y original | ||
| STGB10NB37LZT4G | Nuevo y original | ||
| STGB10NB3TLZT4 | Nuevo y original |