 |  | | |
| PartNumber | STFI6N80K5 | STFI6N62K3 | STFI6N65K3 |
| Description | MOSFET POWER MOSFET | IGBT Transistors MOSFET N-Ch 620 V 0.95 Ohm 5.5 A SuperMESH | RF Bipolar Transistors MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3 |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Rds On Drain Source Resistance | 1.6 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 13 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 25 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Series | STFI6N80K5 | N-channel MDmesh | N-channel MDmesh |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | - | - |
| Fall Time | 16 ns | 20 ns | 24 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 7.5 ns | 12 ns | 10 ns |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28.5 ns | 49 ns | 44 ns |
| Typical Turn On Delay Time | 16 ns | 22 ns | 14 ns |
| Unit Weight | 0.073511 oz | - | - |
| Tradename | - | SuperMESH | SuperMESH |
| Package Case | - | I2PAKFP-3 | I2PAKFP-3 |
| Pd Power Dissipation | - | 30 W | 30 W |
| Vgs Gate Source Voltage | - | 30 V | 30 V |
| Id Continuous Drain Current | - | 5.5 A | 5.4 A |
| Vds Drain Source Breakdown Voltage | - | 620 V | 650 V |
| Vgs th Gate Source Threshold Voltage | - | 3.75 V | 3.75 V |
| Rds On Drain Source Resistance | - | 950 mOhms | 1.1 Ohms |
| Qg Gate Charge | - | 34 nC | 33 nC |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
STMicroelectronics |
STFI6N80K5 | MOSFET POWER MOSFET | |
| STFI6N62K3 | IGBT Transistors MOSFET N-Ch 620 V 0.95 Ohm 5.5 A SuperMESH | ||
| STFI6N65K3 | RF Bipolar Transistors MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3 | ||
| STFI6N80K5 | MOSFET N-CH 800V 4.5A I2PAK-FP |