STF11NM60ND

STF11NM60ND vs STF11NM60ND 11NM60ND vs STF11NM60ND,STP11NM60N,F

 
PartNumberSTF11NM60NDSTF11NM60ND 11NM60NDSTF11NM60ND,STP11NM60N,F
DescriptionMOSFET N-Ch, 600V-0.37ohms FDMesh 10A
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance450 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge30 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation90 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameFDmesh--
PackagingTube--
Height9.3 mm--
Length10.4 mm--
SeriesSTF11NM60ND--
Transistor Type1 N-Channel--
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min7.5 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time7 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time16 ns--
Unit Weight0.011640 oz--
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STF11NM60ND MOSFET N-Ch, 600V-0.37ohms FDMesh 10A
STF11NM60ND MOSFET N-CH 600V 10A TO-220FP
STF11NM60ND 11NM60ND Nuevo y original
STF11NM60ND,STP11NM60N,F Nuevo y original
STF11NM60ND/STF11NM60N Nuevo y original
Top