STD7

STD7NM64N vs STD7NM80 vs STD7NM80-1

 
PartNumberSTD7NM64NSTD7NM80STD7NM80-1
DescriptionMOSFET N-Ch 640V 5A 0.88Ohm typ. Mdmesh IIMOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5AMOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTThrough Hole
Package / CaseTO-252-3TO-252-3TO-251-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage640 V800 V800 V
Id Continuous Drain Current5 A6.5 A6.5 A
Rds On Drain Source Resistance1.05 Ohms1.05 Ohms1.05 Ohms
Vgs th Gate Source Threshold Voltage4 V4 V-
Vgs Gate Source Voltage25 V30 V30 V
Qg Gate Charge14 nC18 nC18 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation60 W90 W90 W
ConfigurationSingleSingleSingle
TradenameMDmeshMDmeshMDmesh
PackagingReelReelTube
SeriesSTD7NM64NSTD7NM80STD7NM80-1
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time12 ns10 ns10 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time10 ns8 ns8 ns
Factory Pack Quantity250025003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time26 ns35 ns35 ns
Typical Turn On Delay Time7 ns20 ns20 ns
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Channel Mode-EnhancementEnhancement
Height-2.4 mm6.2 mm
Length-6.6 mm6.6 mm
Width-6.2 mm2.4 mm
Forward Transconductance Min-4 S-
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STD7NS20T4 MOSFET N-Ch 200 Volt 7 Amp
STD7NM64N MOSFET N-Ch 640V 5A 0.88Ohm typ. Mdmesh II
STD7NM80 MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A
STD7NM80-1 MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A
STD7NM64N Darlington Transistors MOSFET N-Ch 640V 5A 0.88Ohm typ. Mdmesh II
STD7NS20T4 MOSFET N-CH 200V 7A DPAK
STD7NM80-1 MOSFET N-CH 800V 6.5A IPAK
STD7NM80 MOSFET N-CH 800V 6.5A DPAK
STD7NM80-CUT TAPE Nuevo y original
STD7NM62N-H Nuevo y original
STD7NM801 Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
STD7NM80T4 Nuevo y original
STD7NS20 Nuevo y original
STD7NS20T4-1 Nuevo y original
STD7NS20TRL Nuevo y original
STD7NM64D Nuevo y original
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