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| PartNumber | STD35NF06LT4 | STD35NF06L | STD35NF06LT |
| Description | MOSFET N-Ch 60 Volt 35 Amp | Power Field-Effect Transistor, 35A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |
| Manufacturer | STMicroelectronics | - | STMicroelectronics |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 35 A | - | - |
| Rds On Drain Source Resistance | 16 mOhms | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 80 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Tradename | STripFET | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 2.4 mm | - | - |
| Length | 6.6 mm | - | - |
| Series | STD35NF06L | - | STripFET II |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | MOSFET | - | - |
| Width | 6.2 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Forward Transconductance Min | 28 S | - | - |
| Fall Time | 20 ns | - | 20 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 100 ns | - | 100 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | 40 ns |
| Typical Turn On Delay Time | 20 ns | - | 20 ns |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | D-Pak |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 80W |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 1700pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 35A (Tc) |
| Rds On Max Id Vgs | - | - | 17 mOhm @ 17.5A, 10V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 33nC @ 4.5V |
| Pd Power Dissipation | - | - | 80 W |
| Vgs Gate Source Voltage | - | - | 16 V |
| Id Continuous Drain Current | - | - | 35 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 16 mOhms |
| Forward Transconductance Min | - | - | 28 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
STMicroelectronics |
STD35NF06LT4 | MOSFET N-Ch 60 Volt 35 Amp | |
| STD35NF06LT4 | MOSFET N-CH 60V 35A DPAK | ||
| STD35NF06L | Power Field-Effect Transistor, 35A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| STD35NF06LT | Nuevo y original |