STD13

STD13003T4 vs STD130N6F7 vs STD130N4F6AG

 
PartNumberSTD13003T4STD130N6F7STD130N4F6AG
DescriptionBipolar Transistors - BJT H/V FST SWCH PW TRNS NPNMOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in DPAK packageMOSFET Automotive-grade N-channel 40 V, 3.0 mOhm typ., 80 A STripFET F6 Power MOSFET in a DPAK package
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryBipolar Transistors - BJTMOSFETMOSFET
RoHSYNY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3DPAK-3TO-252-3
Transistor PolarityNPNN-ChannelN-Channel
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max400 V--
Emitter Base Voltage VEBO9 V--
Maximum DC Collector Current1.5 A--
Minimum Operating Temperature- 65 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 175 C+ 175 C
SeriesSTD13003STD130N6F7STD130N4F6AG
DC Current Gain hFE Max5--
Height2.4 mm (Max)--
Length6.6 mm (Max)--
PackagingReel-Reel
Width6.2 mm (Max)--
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
DC Collector/Base Gain hfe Min5--
Pd Power Dissipation20000 mW134 W143 W
Product TypeBJTs - Bipolar TransistorsMOSFETMOSFET
Factory Pack Quantity250025002500
SubcategoryTransistorsMOSFETsMOSFETs
Unit Weight0.063493 oz-0.139332 oz
Technology-SiSi
Number of Channels-1 Channel1 Channel
Vds Drain Source Breakdown Voltage-60 V40 V
Id Continuous Drain Current-80 A80 A
Rds On Drain Source Resistance-4.2 mOhms3 mOhms
Vgs th Gate Source Threshold Voltage-2 V2 V
Vgs Gate Source Voltage-20 V20 V
Qg Gate Charge-42 nC70 nC
Channel Mode-EnhancementEnhancement
Tradename-STripFETSTripFET
Transistor Type-1 N-Channel1 N-Channel
Fall Time-24 ns19.5 ns
Rise Time-44 ns62.5 ns
Typical Turn Off Delay Time-62 ns58 ns
Typical Turn On Delay Time-24 ns19.5 ns
Qualification--AEC-Q101
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STD13003T4 Bipolar Transistors - BJT H/V FST SWCH PW TRNS NPN
STD134N4F7AG MOSFET Automotive-grade N-channel 40 V, 2.5 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package
STD13N60DM2 MOSFET N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
STD13NM60N MOSFET N-Ch 600 Volt 11 Amp Power MDmesh
STD13N65M2 MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in DPAK package
STD13N60M2 MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
STD13NM60ND MOSFET N-CH 600V 0.32Ohm 11A MDmesh II Plus
STD130N6F7 MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in DPAK package
STD130N4F6AG MOSFET Automotive-grade N-channel 40 V, 3.0 mOhm typ., 80 A STripFET F6 Power MOSFET in a DPAK package
STD13N50DM2AG MOSFET
STD13NM50N MOSFET N-channel 500 V, 0.285 typ., 12 A MDmesh II Power MOSFET in a DPAK package
STD13003T4 Bipolar Transistors - BJT H/V FST SWCH PW TRNS NPN
STD13NM60ND MOSFET N-CH 600V 11A DPAK
STD13N65M2 RF Bipolar Transistors MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in DPAK package
STD13N60DM2 N-CHANNEL 600 V, 0.310 OHM TYP.,
STD130N4F6AG MOSFET N-CH 40V 80A DPAK
STD130N6F7 MOSFET N-CHANNEL 60V 80A DPAK
STD134N4F7AG MOSFET N-CHANNEL 40V 80A DPAK
STD13N60M2 MOSFET N-CH 600V 11A DPAK
STD13NM60N MOSFET N-CH 600V 11A DPAK
STD13003T4-CUT TAPE Nuevo y original
STD130N4F6AG-CUT TAPE Nuevo y original
STD13N60M2-CUT TAPE Nuevo y original
STD13NM60N-CUT TAPE Nuevo y original
STD13003 Nuevo y original
STD13003-1 Nuevo y original
STD13003A Nuevo y original
STD13003B Nuevo y original
STD13003L Nuevo y original
STD13003L B Nuevo y original
STD13005 Nuevo y original
STD13005F Nuevo y original
STD13005FAJPF Nuevo y original
STD13005FB Nuevo y original
STD13005FB,SDB10150PI, Nuevo y original
STD13005FB,SDB30100PI, Nuevo y original
STD13005FB,SDB30100PI,ST Nuevo y original
STD13005FB,STD13005 Nuevo y original
STD13005I Nuevo y original
STD13007 Nuevo y original
STD13007F Nuevo y original
STD13007FB Nuevo y original
STD13007FC Nuevo y original
STD130GK08 Nuevo y original
STD130GK12 Nuevo y original
STD130GK14 Nuevo y original
STD13NM60NT4 Nuevo y original
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