STB6N6 stock, STB6N6, STB6N60M2


PartNumber	STB6N60M2	STB6N65K3	STB6N62K3
Description	MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2	MOSFET POWER MOSFET	MOSFET N-Channel Power Mosfet D2PAK
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	-	Y
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	TO-263-3	TO-263-3	TO-263-3
Number of Channels	1 Channel	-	1 Channel
Transistor Polarity	N-Channel	-	N-Channel
Vds Drain Source Breakdown Voltage	600 V	-	620 V
Id Continuous Drain Current	4.5 A	-	5.5 A
Rds On Drain Source Resistance	1.06 Ohms	-	950 mOhms
Vgs th Gate Source Threshold Voltage	3 V	-	-
Vgs Gate Source Voltage	25 V	-	30 V
Qg Gate Charge	8 nC	-	34 nC
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 150 C	-	+ 150 C
Pd Power Dissipation	60 W	-	90 W
Configuration	Single	-	Single
Tradename	MDmesh	-	-
Packaging	Reel	-	Reel
Series	STB6N60M2	STB6N65	STB6N62K3
Transistor Type	1 N-Channel	-	1 N-Channel
Brand	STMicroelectronics	STMicroelectronics	STMicroelectronics
Fall Time	22.5 ns	-	20 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	7.4 ns	-	12 ns
Factory Pack Quantity	1000	1000	1000
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	24 ns	-	49 ns
Typical Turn On Delay Time	9.5 ns	-	22 ns
Unit Weight	0.139332 oz	0.077603 oz	0.139332 oz

Search Part Number : "STB6N6", Match & Start with "STB6N6" - Total : 9

Fabricante	Parte #	Descripción
STMicroelectronics	STB6N60M2	MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2
	STB6N65K3	MOSFET POWER MOSFET
	STB6N65M2	MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in D2PAK package
	STB6N62K3	MOSFET N-Channel Power Mosfet D2PAK
	STB6N65M2	IGBT Transistors MOSFET POWER MOSFET
	STB6N65K3	MOSFET N-CH 650V D2PAK
	STB6N60M2	MOSFET N-CH 600V D2PAK
	STB6N62K3	MOSFET N-CH 620V 5.5A D2PAK
	STB6N60	Nuevo y original

STB6N6