PartNumber | STB42N65M5 | STB42N60M2-EP |
Description | MOSFET N-ch 650 Volt 33Amp | MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 600 V |
Id Continuous Drain Current | 33 A | 34 A |
Rds On Drain Source Resistance | 79 mOhms | 87 mOhms |
Vgs Gate Source Voltage | 25 V | 25 V |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 190 W | 250 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | MDmesh | MDmesh |
Packaging | Reel | Reel |
Height | 4.6 mm | - |
Length | 10.4 mm | - |
Series | STB42N65M5 | STB42N60M2-EP |
Transistor Type | 1 N-Channel | - |
Width | 9.35 mm | - |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 13 ns | 8 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 24 ns | 9.5 ns |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 65 ns | 96.5 ns |
Typical Turn On Delay Time | 61 ns | 16.5 ns |
Unit Weight | 0.139332 oz | 0.139332 oz |
Vgs th Gate Source Threshold Voltage | - | 2 V |
Qg Gate Charge | - | 55 nC |