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| PartNumber | STB28N60M2 | STB28N60DM2 |
| Description | MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package | MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 22 A | 22 A |
| Rds On Drain Source Resistance | 150 mOhms | 130 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
| Vgs Gate Source Voltage | 25 V | 25 V |
| Qg Gate Charge | 36 nC | 39 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 170 W | 190 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | MDmesh | MDmesh |
| Packaging | Reel | Reel |
| Series | STB28N60M2 | STB28N60DM2 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 8 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7.2 ns | - |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 100 ns | - |
| Typical Turn On Delay Time | 14.5 ns | - |
| Unit Weight | 0.139332 oz | 0.079014 oz |
| Forward Transconductance Min | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
STMicroelectronics |
STB28N60M2 | MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package | |
| STB28N60DM2 | MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package | ||
| STB28N60DM2 | MOSFET N-CH 600V 21A | ||
| STB28N60M2 | MOSFET N-CH 600V 22A D2PAK | ||
| STB28N60DM2-CUT TAPE | Nuevo y original |