STB20NM5

STB20NM50T4 vs STB20NM50FDT4 vs STB20NM50-1

 
PartNumberSTB20NM50T4STB20NM50FDT4STB20NM50-1
DescriptionMOSFET N-Ch 500 Volt 20 AmpMOSFET N-Ch 500 Volt 20 AmpMOSFET N-Ch 500 Volt 20 Amp
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTThrough Hole
Package / CaseTO-263-3TO-263-3TO-262-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V500 V500 V
Id Continuous Drain Current20 A20 A20 A
Rds On Drain Source Resistance250 mOhms250 mOhms250 mOhms
Vgs Gate Source Voltage30 V30 V30 V
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation192 W192 W192 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelTube
Height4.6 mm4.6 mm8.95 mm
Length10.4 mm10.4 mm10 mm
SeriesSTB20NM50STB20NM50FDSTB20NM50
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeMOSFETMOSFETMOSFET
Width9.35 mm9.35 mm4.4 mm
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Forward Transconductance Min10 S-10 S
Fall Time8.5 ns15 ns8.5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time16 ns20 ns16 ns
Factory Pack Quantity1000100050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time9 ns-9 ns
Typical Turn On Delay Time24 ns22 ns24 ns
Unit Weight0.139332 oz0.139332 oz0.050717 oz
Qg Gate Charge-38 nC-
Tradename-FDmesh-
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STB20NM50T4 MOSFET N-Ch 500 Volt 20 Amp
STB20NM50FDT4 MOSFET N-Ch 500 Volt 20 Amp
STB20NM50-1 MOSFET N-Ch 500 Volt 20 Amp
STB20NM50FDT4 IGBT Transistors MOSFET N-Ch 500 Volt 20 Amp
STB20NM50T4 MOSFET N-CH 550V 20A D2PAK
STB20NM50-1 MOSFET N-CH 550V 20A I2PAK
STB20NM50 Nuevo y original
STB20NM50FD Nuevo y original
STB20NM50FD B20NM50FD Nuevo y original
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