STB12NM50F

STB12NM50FDT4 vs STB12NM50FD vs STB12NM50FD-1

 
PartNumberSTB12NM50FDT4STB12NM50FDSTB12NM50FD-1
DescriptionMOSFET N-Ch 500 Volt 12 AmpMOSFET Transistor, N-Channel, TO-263AB
ManufacturerSTMicroelectronicsST-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleSMD/SMT--
Package / CaseTO-263-3TO-263-3, DPak (2 Leads + Tab), TO-263AB-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance400 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation160 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelCut Tape (CT)-
Height4.6 mm--
Length10.4 mm--
SeriesSTP12NM50FDFDmesh-
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.35 mm--
BrandSTMicroelectronics--
Forward Transconductance Min9.8 S--
Fall Time18 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time39 ns--
Typical Turn On Delay Time19 ns--
Unit Weight0.139332 oz--
Part Status-Obsolete-
FET Type-N-Channel-
Drain to Source Voltage (Vdss)-500V-
Current Continuous Drain (Id) @ 25°C-12A (Tc)-
Drive Voltage (Max Rds On, Min Rds On)-10V-
Vgs(th) (Max) @ Id-5V @ 250A-
Gate Charge (Qg) (Max) @ Vgs-12nC @ 10V-
Vgs (Max)-±30V-
Input Capacitance (Ciss) (Max) @ Vds-1000pF @ 25V-
FET Feature---
Power Dissipation (Max)-160W (Tc)-
Rds On (Max) @ Id, Vgs-400 mOhm @ 6A, 10V-
Operating Temperature--65°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-D2PAK-
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STB12NM50FDT4 MOSFET N-Ch 500 Volt 12 Amp
STB12NM50FD MOSFET Transistor, N-Channel, TO-263AB
STB12NM50FD-1 Nuevo y original
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