SSM6N15AFE,L

SSM6N15AFE,LM vs SSM6N15AFE,LAPM vs SSM6N15AFE,LAPM(T

 
PartNumberSSM6N15AFE,LMSSM6N15AFE,LAPMSSM6N15AFE,LAPM(T
DescriptionMOSFET 30V VDSS 20V VGSS N-Ch 150mW PD
ManufacturerToshiba-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseES6-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 mA--
Rds On Drain Source Resistance3.6 Ohms--
Pd Power Dissipation150 mW--
ConfigurationDual--
PackagingReel--
Height0.55 mm--
Length1.6 mm--
SeriesSSM6N15--
Transistor Type2 N-Channel--
Width1.2 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Unit Weight0.001270 oz--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
SSM6N15AFE,LM MOSFET 30V VDSS 20V VGSS N-Ch 150mW PD
SSM6N15AFE,LM MOSFET 30V VDSS 20V VGSS N-Ch 150mW PD
SSM6N15AFE,LAPM Nuevo y original
SSM6N15AFE,LAPM(T Nuevo y original
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