SQS8

SQS840EN-T1_GE3 vs SQS840EN-T1-GE3 vs SQS840EN

 
PartNumberSQS840EN-T1_GE3SQS840EN-T1-GE3SQS840EN
DescriptionMOSFET 40V 12A 33W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQS840EN-T1_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance13.8 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation33 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.04 mm--
Length3.3 mm--
SeriesSQSQ-
Transistor Type1 N-Channel--
Width3.3 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min31 S--
Fall Time6.4 ns--
Product TypeMOSFETMOSFET-
Rise Time9.4 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time21.6 ns--
Typical Turn On Delay Time7.6 ns--
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SQS850EN-T1_GE3 MOSFET N-Channel 60V AEC-Q101 Qualified
SQS840EN-T1_GE3 MOSFET 40V 12A 33W AEC-Q101 Qualified
SQS840EN-T1-GE3 MOSFET RECOMMENDED ALT 78-SQS840EN-T1_GE3
SQS840EN-T1-GE3 IGBT Transistors MOSFET 40V 12A 33W
SQS840EN Nuevo y original
SQS840ENT1GE3 Power Field-Effect Transisto
SQS850EN Nuevo y original
SQS850EN-T1-GE3 MOSFET RECOMMENDED ALT 78-SQS850EN-T1_GE3
SQS890EN-T1-GE3 Nuevo y original
Vishay
Vishay
SQS840EN-T1_GE3 MOSFET N-CH 40V 16A TO263
SQS850EN-T1_GE3 MOSFET N-CH 60V 12A POWERPAK1212
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