PartNumber | SQS840EN-T1_GE3 | SQS840EN-T1-GE3 | SQS840EN |
Description | MOSFET 40V 12A 33W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQS840EN-T1_GE3 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PowerPAK-1212-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 40 V | - | - |
Id Continuous Drain Current | 12 A | - | - |
Rds On Drain Source Resistance | 13.8 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 22.5 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 33 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | - |
Height | 1.04 mm | - | - |
Length | 3.3 mm | - | - |
Series | SQ | SQ | - |
Transistor Type | 1 N-Channel | - | - |
Width | 3.3 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 31 S | - | - |
Fall Time | 6.4 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 9.4 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 21.6 ns | - | - |
Typical Turn On Delay Time | 7.6 ns | - | - |