SQS484

SQS484EN-T1_GE3 vs SQS484EN-T1-GE3 vs SQS484ENT1GE3

 
PartNumberSQS484EN-T1_GE3SQS484EN-T1-GE3SQS484ENT1GE3
DescriptionMOSFET 40V 16A 62W AEC-Q101 QualifiedTrans MOSFET N-CH 40V 16A Automotive 8-Pin PowerPAK 1212 EP T/RPower Field-Effect Transistor, 16A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current16 A--
Rds On Drain Source Resistance8 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge39 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation62 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height1.04 mm--
Length3.3 mm--
SeriesSQ--
Transistor Type1 N-Channel--
Width3.3 mm--
BrandVishay / Siliconix--
Forward Transconductance Min77 S--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time48 ns--
Typical Turn On Delay Time8 ns--
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SQS484ENW-T1_GE3 MOSFET N-Channel 40V PowerPAK 1212-8W
SQS484EN-T1_GE3 MOSFET 40V 16A 62W AEC-Q101 Qualified
SQS484EN-T1-GE3 Trans MOSFET N-CH 40V 16A Automotive 8-Pin PowerPAK 1212 EP T/R
SQS484ENT1GE3 Power Field-Effect Transistor, 16A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SQS484ENW-T1-GE3 Nuevo y original
Vishay
Vishay
SQS484EN-T1_GE3 MOSFET N-CH 40V 16A 1212-8
SQS484ENW-T1_GE3 MOSFET N-CH 40V 16A POWERPAK1212
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