SQR40N

SQR40N10-25_GE3 vs SQR40N10-25-GE3 vs SQR40N10-25

 
PartNumberSQR40N10-25_GE3SQR40N10-25-GE3SQR40N10-25
DescriptionMOSFET 100V 40A 136W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQR40N10-25_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-Reverse-3TO-252-Reverse-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance19 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge70 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation136 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height2.33 mm2.33 mm-
Length6.73 mm6.73 mm-
SeriesSQSQ-
Transistor Type1 N-Channel--
Width6.22 mm6.22 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min73 S--
Fall Time6 ns--
Product TypeMOSFETMOSFET-
Rise Time11 ns--
Factory Pack Quantity20002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.050717 oz0.050717 oz-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SQR40N10-25_GE3 MOSFET 100V 40A 136W AEC-Q101 Qualified
SQR40N10-25-GE3 MOSFET RECOMMENDED ALT 78-SQR40N10-25_GE3
SQR40N10-25-GE3 RF Bipolar Transistors MOSFET 100V 40A 136W N-Ch Automotive
SQR40N10-25 Nuevo y original
Vishay
Vishay
SQR40N10-25_GE3 MOSFET N-CH 100V 40A TO263
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